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The β→αTransformation in Poly crystalline SiC: III, The Thickening of α Plates
Author(s) -
OGBUJI L. U.,
MITCHELL T. E.,
HEUER A. H.
Publication year - 1981
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1981.tb09583.x
Subject(s) - nucleation , materials science , transmission electron microscopy , stacking , transformation (genetics) , phase (matter) , planar , crystallography , stacking fault , dislocation , partial dislocations , crystal twinning , condensed matter physics , composite material , chemical physics , microstructure , chemistry , nanotechnology , biochemistry , computer graphics (images) , physics , organic chemistry , computer science , gene
The final stages of the β→α polymorphic phase transformation in conventionally sintered and hot‐pressed SiC were studied by optical and transmission electron microscopy. The interface between the α and β regions of partially transformed grains invariably contains thin α lamellae adjacent and parallel to coherent β twins (or β stacking faults). These planar defects serve as nucleation sites for the transformation, with growth of α occurring by the motion of partial dislocations nucleated at the intersection of coherent and incoherent twin boundaries. Various structural phenomena in SiC, including faulting, mi‐crosyntaxy, and long‐period polytypism, are discussed in terms of this transformation mechanism.