Premium
Self‐Diffusion of Carbon‐14 in High‐Purity and N‐Doped α‐SiC Single Crystals
Author(s) -
HONG J. D.,
DAVIS R. F.
Publication year - 1980
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1980.tb10762.x
Subject(s) - doping , diffusion , materials science , single crystal , carbon fibers , analytical chemistry (journal) , crystallography , tracer , chemistry , thermodynamics , organic chemistry , composite material , optoelectronics , physics , composite number , nuclear physics
The self‐diffusion coefficients of 14 C in high‐purity, essentially intrinsic and N‐doped, n ‐type α‐SiC single crystals were measured at 2123 to 2453 K. The Si 14 C tracer was chemically bonded by a traveling solvent technique. The D c * in the doped crystals is smaller than that of the pure materials because of the decreased concentration of the charged donor‐type C vacancies in the presence of the donor N species.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom