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Electrical Properties of Yttrium‐Aluminum‐Silicon Oxynitride Glasses
Author(s) -
LEEDECKE C. J.,
LOEHMAN RONALD E.
Publication year - 1980
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1980.tb10689.x
Subject(s) - yttrium , arrhenius equation , materials science , electrical resistivity and conductivity , dielectric , conductivity , atmospheric temperature range , relaxation (psychology) , analytical chemistry (journal) , activation energy , silicon oxynitride , condensed matter physics , mineralogy , silicon , chemistry , thermodynamics , electrical engineering , optoelectronics , metallurgy , psychology , social psychology , physics , silicon nitride , chromatography , engineering , oxide
The ac electrical properties of several Y‐Al‐Si oxynitride glasses were measured as a function of temperature at 20° to 625°C in the frequency range 50 to 10 5 Hz. The low‐field dc conductivity was also determined. Dispersions in the dielectric constant associated with the peaks in the tan δ curves were observed in all cases. The peaks in tan δ shifted to higher frequencies with increasing temperature. Below ∼400°C, the ac conductivity was proportional to ω n with 0.5< n