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Energy Levels of Donor and Acceptor Dopants and Electron and Hole Mobilities in α‐Al 2 O 3
Author(s) -
TIKU S. K.,
KRÖGER F. A.
Publication year - 1980
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1980.tb10642.x
Subject(s) - acceptor , dopant , charge carrier , scattering , chemistry , thermal conduction , ionization energy , electron mobility , electron , doping , ionization , activation energy , atomic physics , materials science , condensed matter physics , ion , physics , optics , organic chemistry , quantum mechanics , composite material
The relation between activation energy of conduction and the position of energy levels of donors and acceptors is discussed. Level positions of donor and acceptor dopants in A1 2 O 3 at 1600°C are recalculated from published data. Carrier concentrations calculated from the new level positions lead to carrier mobilities with values scattering around 1 cm 2 /V·s, leaving the question of which conduction model is preferable unanswered. Relations of acceptor level positions with values of ionization potentials, redox potentials, and charge transfer bands are used to predict level positions for other transition metal acceptors.