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Self‐Diffusion of Er in Pure and HfO 2 ‐Doped Polycrystalline Er 2 O 3
Author(s) -
SCHEIDECKER R. W.,
BERARD M. F.
Publication year - 1979
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1979.tb19108.x
Subject(s) - dopant , crystallite , diffusion , doping , activation energy , analytical chemistry (journal) , materials science , self diffusion , ion , chemistry , thermodynamics , metallurgy , physics , self service , optoelectronics , business , chromatography , marketing , organic chemistry
Using a tracer sectioning technique, the self‐diffusion of Er in pure and HfO 2 ‐doped polycrystalline Er 2 O 3 was measured at 1614° to 1900°C. Up to ≊ 10 mol% HfO 2 dopant level, the Er self‐diffusion coefficients followed a relation based on cation vacancies as the principal mobile defects present and available for cation diffusion. Above 10 mol% HfO 2 , deviation from this relation occurred, apparently due to clustering of cation vacancies and oxygen interstitials around the dopant hafnium ions. The activation energy for the self‐diffusion of Er in pure Er 2 O 3 was 82.2 kcal/mol and increased with the HfO 2 dopant level present.