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Single‐Crystal Boundary Migration in Hot‐Pressed Aluminum Oxide
Author(s) -
MONAHAN R. D.,
HALLORAN J. W.
Publication year - 1979
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1979.tb12731.x
Subject(s) - sapphire , materials science , grain boundary , aluminium oxides , aluminium , oxide , growth rate , mineralogy , hot pressing , doping , aluminum oxide , composite material , metallurgy , chemistry , microstructure , geometry , optics , laser , biochemistry , physics , mathematics , optoelectronics , catalysis
The growth of sapphire filaments embedded in hot‐pressed alumina was studied at 1672°C. In undoped alumina, a constant growth rate of 1.17×10 ‐6 cm/s was observed. The initial growth rate into MgO‐doped alumina was 4.6×10 ‐8 cm/s, decreasing with increasing matrix grain size. Observed rates of boundary migration were larger than those of previously reported data.