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Microstructure of SiC Prepared by Chemical Vapor Deposition
Author(s) -
SHINOZAKI SAMUEL S.,
SATO HIROSHI
Publication year - 1978
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1978.tb09352.x
Subject(s) - materials science , microstructure , chemical vapor deposition , crystallography , transmission electron microscopy , crystal habit , substrate (aquarium) , crystal (programming language) , scanning electron microscope , silicon carbide , crystal growth , perpendicular , deposition (geology) , optical microscope , chemical engineering , composite material , nanotechnology , crystallization , chemistry , geometry , paleontology , oceanography , mathematics , engineering , sediment , geology , computer science , biology , programming language
Silicon carbide prepared by chemical vapor deposition at a substrate temperature of ∼1400425‐429°C was investigated. Optical microscopy showed that the growth characteristic is dendritic; the deposits consist of columnar blocks within each of which the orientation of crystals is approximately the same. Small pores occur along the boundaries of these blocks. Transmission electron microscopy revealed finer details of the growth characteristics. The crystals were mostly 3 C in structure, but crystals with 2H and one‐dimensionally‐disordered structures were also found. The 3 C crystals are mostly dendritic, but some columnar growth with alternating twin bands occurs. Both 2 H and one‐dimensionallydisordered crystals exhibit a columnar habit, reflecting the difference in crystal symmetry from 3 C . In all these crystals, the c axis (or one of the <111> axes in 3 C crystals) lies perpendicular to the substrate.