Premium
Impurity Phases in Hot‐Pressed Si 3 N 4
Author(s) -
LOU L. K. V.,
MITCHELL T. E.,
HEUER A. H.
Publication year - 1978
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1978.tb09344.x
Subject(s) - impurity , transmission electron microscopy , materials science , grain boundary , phase (matter) , hot pressing , analytical chemistry (journal) , crystallography , mineralogy , microstructure , metallurgy , chemistry , nanotechnology , organic chemistry , chromatography
Impurity phases in commercial hot‐pressed Si 3 N 4 were investigated using transmission electron microscopy. In addition to the dominant, β‐Si 3 N 4 phase, small amounts of Si 2 N 2 O, SiC, and WC were found. Significantly, a continuous grain‐boundary phase was observed in the ∼ 25 high‐angle boundaries examined. This film is ∼ 10 Å thick between, β‐Si 3 N 4 grains and ∼ 30 Å thick between Si 2 N 2 O and β‐Si 3 N 4 grains.