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Kinetics of Sicl4 Oxidation
Author(s) -
POWERS D. R.
Publication year - 1978
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1978.tb09312.x
Subject(s) - chemistry , activation energy , kinetics , order of reaction , chemical kinetics , oxygen , reaction rate , zero order , first order , bond energy , inorganic chemistry , reaction rate constant , catalysis , organic chemistry , molecule , physics , mathematics , quantum mechanics
The oxidation rate of SiCl 4 was studied at 1100° to 1300°C. The reaction was first order in SiCl 4 and zero order in O 2 up to a 20‐fold excess of O 2 . At higher O 2 concentrations, the reaction becomes first order in oxygen. The activation energy for the reaction was 96 ± 5 kcal/mol which is approximately the CI 3 SiCI bond energy. The reaction SiCl 4 → SiCl 3 + Cl is proposed as the rate‐determining step.