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Hydrogen Diffusion and Solubility in Silicon Carbide
Author(s) -
CAUSEY R. A.,
FOWLER J. D.,
RAVANBAKHT CAMRAN,
ELLEMAN T. S.,
VERGHESE KURUVILLA
Publication year - 1978
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1978.tb09284.x
Subject(s) - solubility , diffusion , carbide , hydrogen , deuterium , silicon carbide , silicon , tritium , materials science , chemistry , analytical chemistry (journal) , inorganic chemistry , radiochemistry , metallurgy , thermodynamics , organic chemistry , nuclear physics , physics
Tritium diffusion coefficients and deuterium solubilities were measured for silicon carbide. At 500° to 1300° C, measured tritium diffusion coefficients were much lower than the recorded values for metals, whereas the activation energies for diffusion were much higher (30 to 75 kcal/mol). The solubility of deuterium in silicon carbide decreased as temperature increased and exhibited a pressure dependence of ∼ P 1l2 .