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Oxidation of Thin Sheet Reaction‐Sintered Silicon Nitride
Author(s) -
WARBURTON J. B.,
ANTILL J. E.,
HAWES R. W. M.
Publication year - 1978
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1978.tb09233.x
Subject(s) - silicon nitride , materials science , nitride , silicon , chemical engineering , redox , composite material , mineralogy , chemistry , metallurgy , layer (electronics) , engineering
Oxidation of reaction‐sintered silicon nitride was studied in damp air. The formation of “passive” silica films was investigated at 1 atm and 700 to 1100°C and some limited work on weight loss behavior was performed in vacuo of 10 −8 to 10 −5 atm at 1050 to 1200°C. Passive behavior was dominated by reaction in the pore network. Oxidation was extensive at 900 to 1000° but slight at 700 to 800°C. At 1100°C a protective skin limited reaction. Weight loss in vacuo was slight at 1050°C. The vacuum pressure required to suppress the weight loss increased from 4 to 5 × 10 −7 atm at 1050° to 1.5 to 2.5 × 10 −5 atm at 1200°C.