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Compounds and Properties of the System Si‐Al‐O‐N
Author(s) -
LAND P. L.,
WIMMER J. M.,
BURNS R. W.,
CHOUDHURY N. S.
Publication year - 1978
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1978.tb09230.x
Subject(s) - sintering , diffraction , phase diagram , materials science , lattice (music) , product (mathematics) , x ray crystallography , thermodynamics , crystallography , mineralogy , chemistry , metallurgy , physics , mathematics , optics , geometry , phase (matter) , organic chemistry , acoustics
A product or quasi‐equilibrium diagram for compounds formed in the system Si‐Al‐O‐N at 1800°C in 1 atm N 2 is presented, X‐ray diffraction data for phases are given, and the reaction and sintering processes are discussed. Data for the lattice expansion of the β‐Si 3 N 4 structure accompanying the incorporation of Al‐O is presented and used to calculate theoretical densities.