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Radiation‐Induced Mobility of Substitutional Hydrogen in MgO
Author(s) -
CHEN Y.,
ABRAHAM M. M.,
TEMPLETON L. C.
Publication year - 1977
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1977.tb15480.x
Subject(s) - hydrogen , irradiation , annealing (glass) , materials science , vacancy defect , paramagnetism , analytical chemistry (journal) , crystallography , nuclear magnetic resonance , condensed matter physics , chemistry , metallurgy , physics , organic chemistry , chromatography , nuclear physics
The distribution of hydrogen between substitutional sites and Mg(OH) 2 precipitates in MgO single crystals depends on the thermal treatment of the crystal. Isochronal annealing studies of quenched and slow‐cooled crystals indicate that the substitutional H, as monitored by the O–H stretching frequency at 3296 cm ‐1 , is not mobile at <800 K. However, under the influence of electron irradiation, H is mobile below room temperature. The net result of the irradiations is the appearance of the paramagnetic vacancy left behind by the H and an enhancement of the amplitude of the Mg(OH) 2 absorption band. The mobility of the substitutional H, which was found to be a strong function of the irradiation temperature, was greater at 290 K than at 85 K. A mechanism for the displacement of the substitutional H is proposed.