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Electrical Conduction in Single‐Crystal Thallic Oxide: II, Effects of Annealing at 923°K in Oxygen Pressures from 0.01 to 1 Atmosphere
Author(s) -
SHUKLA V. N.,
WIRTZ G. P.
Publication year - 1977
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1977.tb14120.x
Subject(s) - annealing (glass) , oxygen , electrical resistivity and conductivity , partial pressure , conductivity , degenerate semiconductor , analytical chemistry (journal) , thermal conduction , conduction band , atmospheric temperature range , chemistry , materials science , oxide , semiconductor , condensed matter physics , thermodynamics , electron , metallurgy , physics , optoelectronics , organic chemistry , chromatography , quantum mechanics , composite material
The low‐temperature conductivity of thallic oxide (Tl 2 O 3 ) is relatively insensitive to the equilibrium partial pressure of oxygen during annealing at 923°K, i.e. the maximum variation is ∼15% over the range of 0.01 to 1 atm O 2 , with a relative maximum occurring at ∼0.2 atm. The insensitivity in conductivity results from the compensating effects of increasing mobility and decreasing carrier concentration with increasing oxygen pressure during annealing. At low oxygen pressures, defect interactions complicate the interpretation of the measurements, but a calculated Fermi energy on the order of 0.8 eV is sufficiently close to other reported values to confirm the model of a highly degenerate semiconductor with a simple S‐like conduction band described by a parabolic density‐of‐states function.