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Grain‐Boundary Diffusion of U in Pure and Doped Uranium Carbides with Different C/U Ratios
Author(s) -
ROUTBORT J. L.,
MATZKE Hj.
Publication year - 1975
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1975.tb19561.x
Subject(s) - grain boundary diffusion coefficient , carbide , grain boundary , diffusion , materials science , impurity , doping , uranium , thermal diffusivity , analytical chemistry (journal) , enthalpy , volume (thermodynamics) , atmospheric temperature range , metallurgy , thermodynamics , chemistry , microstructure , physics , optoelectronics , organic chemistry , chromatography
“The grain‐boundary diffusivity of U in UC was measured between 1200” and 2200°C in pure carbides with a wide range of C/U ratios (0.93 to 2.00) and in material doped with up to 2.4 wt% W, V, or Ta. Grain‐boundary diffusion is ∼ 10 3 to 10 5 times faster than volume diffusion, and, for UC 1,0 , has an activation enthalpy of 75.9 ± 9.1 kcal/mol, ∼ 55% of that for volume diffusion. In the monocarbide region, grain‐boundary mobility increases as the C/U ratio decreases and is impeded by the addition of impurities.