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Wetting of SiC, Si 3 N 4 , and Carbon by Si and Binary Si Alloys
Author(s) -
WHALEN T. J.,
ANDERSON ANTHONY T.
Publication year - 1975
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1975.tb19006.x
Subject(s) - wetting , sessile drop technique , materials science , contact angle , silicon , carbon fibers , drop (telecommunication) , infiltration (hvac) , composite material , chemical engineering , metallurgy , composite number , engineering , telecommunications , computer science
The wetting of several new materials for gas turbine engines, e.g. SiC, Si 3 N 4 , and C, by liquid Si and binary Si alloys containing Cu, Fe, and B was determined by the sessile drop method. All contact angles measured were < 90°. Hot‐pressed SiC, Si 3 N 4 , and Refel SiC are easily wet by Si; wetting is controlled by the balance of interfacial energies. Carbon is wet well by Si, but wetting is controlled by reaction and, in some carbons, by infiltration of Si into C. Additives to Si such as B and Fe can form compounds in reaction zones during wetting at interfacial areas.