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Creep Deformation of Reaction‐Sintered Silicon Nitrides
Author(s) -
DIN SALAH UD,
NICHOLSON PATRICK S.
Publication year - 1975
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1975.tb18768.x
Subject(s) - creep , materials science , silicon nitride , microstructure , composite material , slip (aerodynamics) , grain boundary sliding , deformation mechanism , scanning electron microscope , activation energy , transmission electron microscopy , grain boundary , silicon , diffusion creep , stress (linguistics) , metallurgy , chemistry , thermodynamics , nanotechnology , linguistics , physics , philosophy , organic chemistry
The steady‐state creep behavior of reaction‐bonded silicon nitride, prepared by slip casting and injection molding, was examined in 4point bending with stresses ranging from 10,000 to 20,000 psi at temperatures from 1200° to 1450°C. Creep rates were proportional to the 1.4 power of the stress. The creep process exhibited an activation energy of 130±5 kcal/mol. The microstructure of deformed specimens, which was revealed by transmission and scanning electron microscopy, contained triple‐point voids suggesting that the rate‐controlling mechanism of creep is grain‐boundary sliding.