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Use of Thermoelectronic Emission for Studying Point Defects in Refractory Oxides
Author(s) -
RIFFLET J. C.,
ODIER P.,
ANTHONY A. M.,
LOUP J. P.
Publication year - 1975
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1975.tb18766.x
Subject(s) - refractory (planetary science) , crystallographic defect , materials science , oxide , chemisorption , refractory metals , analytical chemistry (journal) , thermodynamics , mineralogy , chemistry , metallurgy , physics , crystallography , adsorption , chromatography
The thermoelectronic emission of refractory oxides in equilibrium with O 2 pressures from 10 −6 to 10 −11 atm at T > 1200°K is controlled not by chemisorption but by point defects present in the oxide. The effect of gases such as CO, CO 2 , and N 2 was investigated. Analysis of the emission results for ZrO 2 and Y 2 O 3 , compared with their electrical conductivities, indicates the presence of anti‐Frenkel disorder in these materials. Thus, high‐temperature thermoelectronic emission as a function of O 2 pressure can be used to study point defects in refractory oxides.