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Hot‐Pressing of Silicon Carbide with 1% Boron Carbide Addition
Author(s) -
BIND J. M.,
BIGGERS JAMES V.
Publication year - 1975
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1975.tb11482.x
Subject(s) - silicon carbide , boron carbide , materials science , hot pressing , carbide , pressing , activation energy , metallurgy , boron , composite material , chemistry , organic chemistry
The densification behavior of pressure sintered cubic silicon carbide containing 1 wt% boron carbide was studied as a function of temperature (1750° to 1950°C). Specimens of theoretical density were obtained at 1950° with a pressure of 3000 psi. Experimental results showed that densification proceeded by a plastic flow mechanism. Interpretation of the data in terms of Murray's equation yields an activation energy of (11S ± 18) kcal/mol. At 1850C and above, tabular grains of 6H and 2H SiC were observed in a matrix of fine grains of 3C SiC.