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Properties of Surface Barrier Layer Formed on a Semiconducting BaTiO 3 Ceramic
Author(s) -
WAKINO KIKUO
Publication year - 1974
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1974.tb11393.x
Subject(s) - layer (electronics) , ceramic , materials science , ceramic capacitor , barrier layer , transition layer , composite material , electrode , surface layer , capacitor , capacitive sensing , optoelectronics , chemistry , electrical engineering , voltage , engineering
A mechanism for formation of a capacitive layer is described. Copper was vacuum‐evaporated onto the surface of a semiconducting BaTiO 3 ceramic, Ag paste was applied to this layer, and the capacitor was fired in air. A transition layer ∼3 μm thick was formed between the electrode and the n ‐type semiconducting ceramic; this layer exhibits characteristics typical of a p‐n junction.