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Effect of Oxygen on the Reaction Between Copper and Sapphire
Author(s) -
O'BRIEN T. E.,
CHAKLADER A. C. D.
Publication year - 1974
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1974.tb10915.x
Subject(s) - sapphire , wetting , oxygen , sessile drop technique , drop (telecommunication) , adsorption , surface energy , copper , gibbs free energy , work function , limiting oxygen concentration , thermodynamics , activation energy , materials science , analytical chemistry (journal) , chemistry , layer (electronics) , nanotechnology , metallurgy , composite material , optics , chromatography , telecommunications , laser , physics , organic chemistry , computer science
The effect of oxygen potential on the wetting behavior and interfacial energy between Cu and sapphire was studied using the sessile drop technique in a CO‐CO 2 atmosphere. A linear relation was found between γ SL and log p O 2 (atm) from 10 −16 to 10 −5 . Beyond 10 −5 atm γ SL approached a constant value asymptotically. A barrier surface layer was proposed to explain this change. The Gibbs adsorption equation was used to evaluate the characteristics of the interfaces. Formation of a Cu 2 O film at the liquid‐vapor interface and a CuAlO 2 film at the solid‐liquid interface is suggested. The work of adhesion reached a maximum at ∼ 0.01 at.% oxygen, corresponding to p O 2 ∼ 10 −9 atm. Measurements of the basal radius as a function of oxygen content were used to evaluate the role of oxygen in promoting spreading. Spreading on sapphire is directly proportional to the logarithm of oxygen present in the molten Cu drops.