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Kinetics of Nitridation of Si Powder Compacts
Author(s) -
MESSIER DONALD R.,
WONG PHILIP
Publication year - 1973
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1973.tb12529.x
Subject(s) - kinetics , impurity , materials science , liquid phase , phase (matter) , chemical kinetics , reaction rate , metallurgy , chemical engineering , layer (electronics) , mineralogy , chemistry , catalysis , composite material , thermodynamics , organic chemistry , physics , quantum mechanics , engineering
The kinetics of the reaction of Si powder compacts and N 2 to form Si 3 N 4 were investigated thermogravimetrically from 1300° to 1450°C. The results indicate that trace amounts of O 2 inhibit the rate of nitridation by forming a thin protective layer of SiO 2 , whereas Fe impurities catalytically accelerate the rate of reaction by liquid‐phase formation. Complicating factors that account for difficulties in interpreting the reaction kinetics and for the poor agreement among previous investigations are discussed.