Influence of Grain Growth on Dielectric Properties of Nb‐Doped BaTiO 3 | Zendy

KAHN MANFRED | Zendy

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Influence of Grain Growth on Dielectric Properties of Nb‐Doped BaTiO 3

Author(s) -

KAHN MANFRED

Publication year - 1971

Publication title -

journal of the american ceramic society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.9

H-Index - 196

eISSN - 1551-2916

pISSN - 0002-7820

DOI - 10.1111/j.1151-2916.1971.tb12384.x

Subject(s) - materials science , grain size , curie temperature , dielectric , grain growth , doping , mineralogy , composite material , analytical chemistry (journal) , condensed matter physics , chemistry , physics , optoelectronics , chromatography , ferromagnetism

Effects of grain size and grain growth in Nb‐doped BaTiO 3 on temperature and frequency dependencies of the dielectric constant were investigated. When 0.65 μm powder is sintered to an average grain size of 1 μm, two dielectric constant peaks indicate the presence of Nb‐free BaTiO 3 and of Nb‐containing material. Single peaks are observed above room temperature after additional grain growth or when 0.07 μm powder is sintered to an average grain size of 1 μm. The Curie point of pure BaTiO 3 with 1 μm grains is 4 to 6°C lower than that of material with grains >10 μm. Thermodynamically, this behavior is accounted for by a phase inversion stress ∼ the room‐temperature stress.

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