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Influence of Grain Growth on Dielectric Properties of Nb‐Doped BaTiO 3
Author(s) -
KAHN MANFRED
Publication year - 1971
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1971.tb12384.x
Subject(s) - materials science , grain size , curie temperature , dielectric , grain growth , doping , mineralogy , composite material , analytical chemistry (journal) , condensed matter physics , chemistry , physics , optoelectronics , chromatography , ferromagnetism
Effects of grain size and grain growth in Nb‐doped BaTiO 3 on temperature and frequency dependencies of the dielectric constant were investigated. When 0.65 μm powder is sintered to an average grain size of 1 μm, two dielectric constant peaks indicate the presence of Nb‐free BaTiO 3 and of Nb‐containing material. Single peaks are observed above room temperature after additional grain growth or when 0.07 μm powder is sintered to an average grain size of 1 μm. The Curie point of pure BaTiO 3 with 1 μm grains is 4 to 6°C lower than that of material with grains >10 μm. Thermodynamically, this behavior is accounted for by a phase inversion stress ∼ the room‐temperature stress.