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Electrochemical Cells and Electrical Conduction of Pure and Doped Al 2 O 3
Author(s) -
BROOK R. J.,
YEE J.,
KRÖGER F. A.
Publication year - 1971
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1971.tb12382.x
Subject(s) - materials science , doping , thermal conduction , charge carrier , electrical resistivity and conductivity , oxide , ionic bonding , ion , electrochemistry , ionic conductivity , analytical chemistry (journal) , condensed matter physics , chemistry , electrolyte , electrode , optoelectronics , electrical engineering , metallurgy , composite material , physics , organic chemistry , chromatography , engineering
Data concerning the types of charge carrier responsible for electrical conduction in single‐crystal aluminum oxide are reviewed, and explanations are offered for discrepancies in terms of the experimental conditions. Measurements on undoped and Co 2+ and Mg 2+ doped crystals, made using a volume guard to avoid surface and gas conduction, are used to describe Al 2 O 3 as an ionic conductor with Al interstitial ions as the principal charge carriers at high oxygen activity. A defect model is proposed and the mobility of Al i 3+ , the concentration of Al i 3+ in undoped crystals, and the equilibrium constant for defect formation at high temperatures are estimated.