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Ionic Domain for Y 2 O 3 ‐Doped ThO 2 at Low Oxygen Activities
Author(s) -
III JOHN B. HARDAWAY,
PATTERSON JOHN W.,
WILDER D. R.,
SCHIELTZ JON D.
Publication year - 1971
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1971.tb12226.x
Subject(s) - oxygen , doping , ionic bonding , domain (mathematical analysis) , thermal conduction , materials science , chemistry , mineralogy , ion , optoelectronics , mathematics , mathematical analysis , organic chemistry , composite material
The emf method was used to determine the lower limit of oxygen activity for essentially pure anionic conduction in Th 0.85 Y 0.15 O 1.925 from 775° to 1000C. The results show that the oxygen transference number is ≥0.99 when log PO 2 ≥−6.5(10 4 / T °K)+29.