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Stacking Faults in Chemically‐Vapor‐Deposited Beta Silicon Carbide
Author(s) -
GULDEN T. D.
Publication year - 1971
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1971.tb12187.x
Subject(s) - stacking , silicon carbide , materials science , chemical vapor deposition , planar , electron diffraction , beta (programming language) , silicon , diffraction , carbide , crystallography , composite material , chemistry , nanotechnology , optoelectronics , optics , computer science , physics , computer graphics (images) , organic chemistry , programming language
A high density of planar defects, often forming closed figures on {111} planes, was observed in chemically‐vapor‐deposited β‐SiC. The defects were identified as extrinsic stacking faults by electron diffraction contrast analysis.