Premium
Substructure and Perfection in UO 2 Single Crystals
Author(s) -
CHAPMAN A. T.,
CLARK G. W.,
HENDRIX D. E.,
YUST C. S.,
CAVIN O. B.
Publication year - 1970
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1970.tb11998.x
Subject(s) - substructure , materials science , stoichiometry , chemical vapor deposition , crystallography , crystal growth , electron microscope , analytical chemistry (journal) , mineralogy , chemistry , nanotechnology , optics , physics , chromatography , engineering , structural engineering , organic chemistry
The quality of UO 2 single crystals grown by arc‐melting, by a modified floating‐zone technique (ICZG), and by vapor deposition was studied using etch‐pit patterns, electron microscopy, and X‐ray topography. These techniques complemented each other and indicated significant variations between the crystals grown by the different techniques. Both types of melt‐grown crystals contained extensive substructure and approximately 10 6 etch pits/cm 2 ; finely dispersed inhomogeneities were found in the vapor‐grown crystals. Stoichiometry control during growth permitted a major improvement in the perfection of the ICZG crystals.