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Oxidation Kinetics of Single Crystal Titanium Nitride by Optical Measurements
Author(s) -
PEARCE M. L.,
BASCH C.
Publication year - 1969
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1969.tb09201.x
Subject(s) - crystallite , materials science , nitride , titanium nitride , titanium , oxide , activation energy , kinetics , diffusion , single crystal , metal , titanium oxide , chemical engineering , metallurgy , nanotechnology , crystallography , chemistry , thermodynamics , physics , layer (electronics) , quantum mechanics , engineering
Oxidation of single crystals of titanium nitride was studied from 540° to 780°C using the optical interference produced by the thin oxide film formed on the surface. The kinetics are strictly diffusion‐controlled rather than reaction‐controlled, as observed by other workers for the initial oxidation of the polycrystalline material. This conflict is rationalized on the basis of the material differences and particularly the crystalline nature and perfection of the oxide film. The activation energy derived is in excellent agreement with that reported in the literature for the diffusion‐controlled oxidation of polycrystalline titanium nitride and titanium metal.