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Interface Reactions Between Metals and Ceramics: IV, Wetting of Sapphire by Liquid Copper‐Oxygen Alloys
Author(s) -
CHAKLADER A. C. D.,
ARMSTRONG A. M.,
MISRA S. K.
Publication year - 1968
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1968.tb12634.x
Subject(s) - sessile drop technique , wetting , copper , oxygen , drop (telecommunication) , contact angle , ceramic , oxide , sapphire , materials science , copper oxide , chemistry , chemical reaction , inorganic chemistry , chemical engineering , analytical chemistry (journal) , metallurgy , composite material , chromatography , organic chemistry , telecommunications , laser , physics , computer science , optics , engineering
The wettability of sapphire single crystals by liquid copper which contained oxygen added as cupric oxide was investigated using the sessile drop technique in vacuum at 1230°C. Additions of cupric oxide to copper, varying from 1 to 72% of copper weight, resulted in rapid chemical reaction at the solid‐liquid interface with a significant reduction of the contact angle, the final value being dependent on the oxygen in the system. In all cases the interfacial product was CuAlO 2 . A linear relation between the fourth power of the basal radius of the molten drop and the amount of oxygen present was observed. The initial stage of the reaction could be explained by the formation of a Cu 2 O layer at the interface, followed by reaction between Cu 2 O and Al 2 O 3 to form CuAlO 2 .