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Formation of Silicon and Titanium Carbides by Chemical Vapor Deposition
Author(s) -
PEARCE M. L.,
MAREK R. W.
Publication year - 1968
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1968.tb11842.x
Subject(s) - titanium , titanium tetrachloride , silicon , carbide , silicon carbide , hydrogen , materials science , chemical vapor deposition , silicon tetrachloride , deposition (geology) , methane , titanium carbide , halide , chemical engineering , inorganic chemistry , metallurgy , chemistry , nanotechnology , organic chemistry , paleontology , sediment , engineering , biology
A major difference is demonstrated in the mechanisms whereby silicon and titanium carbides are deposited at high temperatures from gas mixtures containing the appropriate tetrachloride, hydrogen, and methane. For silicon carbide, reduction of the halide by hydrogen to elemental silicon is involved, whereas for titanium carbide the process does not involve elemental titanium. It is proposed that initial formation of pyrocarbon is required for the deposition of titanium carbide near 1200°C or that gas phase reactions involving subhalides are important.