Premium
Electrical Properties and Defect Structure of HfO 2
Author(s) -
TALLAN N. M.,
TRIPP W. C.,
VEST R. W.
Publication year - 1967
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1967.tb15109.x
Subject(s) - partial pressure , electrical resistivity and conductivity , conductivity , oxygen , analytical chemistry (journal) , charge carrier , crystallite , ionization , materials science , hafnium , chemistry , zirconium , inorganic chemistry , crystallography , ion , optoelectronics , organic chemistry , chromatography , electrical engineering , engineering
The defect structure of high‐purity, polycrystalline HfO 2 was investigated by measuring the oxygen partial pressure dependence of the electrical conductivity and the sample weight. From 1000° to 1500°C and above oxygen partial pressures of 10 −6 , the conductivity is electronic and proportional to p o 2 1/5 . The predominant defect is completely ionized hafnium vacancies. At lower oxygen partial pressures a broad shallow minimum in the lower temperature conductivity isotherms indicates the presence of an oxygen pressure independent source of electronic charge carriers. By combining the weight change and conductivity data, mobility values were found to vary from 1.6 × 10 −3 to 3 × 10 −4 cm 2 /V‐sec. The activation energies for the hole mobilities were calculated to be 0.2 ev above 1300° C and 0.7 ev below this temperature.