Premium
Barium Zirconate Modified with Lanthanum, a High‐Temperature Capacitor Dielectric
Author(s) -
KOENIG J.,
JAFFE B.
Publication year - 1964
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1964.tb15661.x
Subject(s) - electrical resistivity and conductivity , materials science , barium , dielectric , analytical chemistry (journal) , lanthanum , ohm , mineralogy , chemistry , electrical engineering , metallurgy , inorganic chemistry , optoelectronics , chromatography , engineering
The electrical properties of BaZrO 3 containing 2 to 6 at. % La were investigated. Room‐temperature dielectric constants at 1 Mc were about 43 and the mean temperature coefficients of K were about −240 ppm per °C. The admixture of La 3+ raised the volume resistivity by several orders of magnitude. Values as high as 10° ohm‐cm were observed at 500° C. Q values at 1 Mc and 500° C ranged between 100 and 400. Wafers 10 mils thick endured 1000‐hour life tests at 250° and 350°C in a field of 60 volts per mil and at 500°C in a field of 30 volts per m.il with good stability. Breakdown strengths as high as 680 volts per mil were measured for specimens 10 mils thick. The mechanism of conduction was indicated to be P‐type, with La 3+ improving resistivity by lowering the hole concentration.