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Phase Equilibria in the System Boron Carbide‐Silicon Carbide
Author(s) -
SECRIST D. R.
Publication year - 1964
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1964.tb14369.x
Subject(s) - eutectic system , silicon carbide , boron carbide , materials science , carbide , phase (matter) , hexagonal crystal system , boron , solubility , solid solubility , metallurgy , analytical chemistry (journal) , crystallography , solid solution , microstructure , chemistry , organic chemistry , chromatography
The system boron carbide‐silicon carbide is quasi binary and contains a eutectic of composition 70 ± 2 wt% B 4 C and 30 ± 2 wt% Sic at a temperature of 2300°± 20° C. The solid solubility of both B 4 C in Sic and Sic in B 4 C is less than 2 wt% at this temperature, based on metallographic and X‐ray analyses. The Sic corresponds to the hexagonal (a) allotrope when the compositions contain more than 50 wt% Sic. The cubic (p) form of Sic is stabilized in compositions which contain less than 50 wt% Sic.