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Electrical Conduction Anomaly of Semiconducting Glasses in the System As—Te—I
Author(s) -
EATON D. L.
Publication year - 1964
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1964.tb13816.x
Subject(s) - electrical resistivity and conductivity , condensed matter physics , materials science , ohm , anomaly (physics) , seebeck coefficient , thermal conduction , dielectric , phase (matter) , transformation (genetics) , thermoelectric effect , electrical conduction , electrical resistance and conductance , mineralogy , thermodynamics , thermal conductivity , chemistry , physics , composite material , optoelectronics , biochemistry , organic chemistry , quantum mechanics , gene
The transformation from one resistance state to another by glasses in the system As‐Te‐I is discussed and a model is postulated. The anomalous behavior of the electrical properties of glasses in this system is shown to result from thermal breakdown of the dielectric during which reversible glass‐to‐crystal phase transformation occurs. Results of compositional studies and the measurement of the electrical characteristics of resistivity, Seebeck coefficients, and current‐voltage curves are given. Resistivities of 10 3 to > 10 7 ohm‐cm and Seebeck coefficients of +800 to ±4300μv per OC were measured for glasses in this system.

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