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Resistivity Anomaly in Doped Barium Titanate
Author(s) -
HEYWANG W.
Publication year - 1964
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1964.tb13795.x
Subject(s) - electrical resistivity and conductivity , barium titanate , anomaly (physics) , doping , condensed matter physics , barium , materials science , activation energy , mineralogy , range (aeronautics) , chemistry , physics , composite material , ceramic , metallurgy , quantum mechanics
The barrier‐layer model previously proposed to explain the anomalous increase in resistivity that occurs in doped BaTiO 3 has been reexamined in the light of data obtained from more recent experiments. The picture thus obtained describes correctly and quantitatively the resistivity anomaly and the frequency and voltage dependence of the resistivity in the entire temperature range investigated (‐180° to +200°C). The activation energy of the donors and of the surface states as well as the density of states in BaTiO 3 were determined and are in close agreement with other investigations. Comments are made regarding the uncertainty of the nature of the surface states.