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Effects of Oxygen Partial Pressure on the Oxidation of Silicon Carbide
Author(s) -
JORGENSEN PAUL J.,
WADSWORTH MILTON E.,
CUTLER IVAN B.
Publication year - 1960
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1960.tb12983.x
Subject(s) - partial pressure , silicon carbide , oxygen , diffusion , materials science , silicon , logarithm , oxygen pressure , carbide , thermodynamics , chemical engineering , analytical chemistry (journal) , chemistry , metallurgy , mathematics , environmental chemistry , organic chemistry , physics , mathematical analysis , engineering
The rate of oxidation of silicon carbide was studied at different partial pressures of oxygen. The diffusion rate constant was found to vary with the logarithm of the partial pressure of oxygen according to the theory of oxidation of thin films as proposed by Engell and Hauffe. An alternative explanation based on the change of free energy with surface coverage was also found to fit the data.