Premium
Plastic Deformation of Ceramic‐Oxide Single Crystals
Author(s) -
WACHTMAN J. B.,
MAXWELL I. H.
Publication year - 1954
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1954.tb14041.x
Subject(s) - creep , materials science , sapphire , slip (aerodynamics) , composite material , ceramic , diffusion creep , deformation mechanism , metallurgy , mineralogy , geology , optics , thermodynamics , grain boundary , microstructure , laser , physics
It was found that plastic deformation takes place in periclase above 1100°C., in rutile above 600°C., and in sapphire above 900°C. The mechanism is slip; in sapphire (0001) is the slip plane and [1120] is the slip directiog. All creep curves for sapphire in tension show the same qualitative features. Each consists of three stages: a stage of increasing creep rate (sometimes called an incubation period), a stage of large but decreasing creep rate (sometimes called first‐stage creep), and a stage of small and nearly constant creep rate (sometimes called second‐stage creep). The so‐called third‐stage creep, characteristic of metal behavior, has not been noted. Plastic deformation increases the electrical resistivity of sapphire at constant temperature.