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Electrical Resistance of Some Refractory Oxides and Their Mixtures in the Temperature Range 600° to 1500°C.
Author(s) -
HENSLER J. R.,
HENRY E. C.
Publication year - 1953
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1953.tb12841.x
Subject(s) - non blocking i/o , materials science , atmospheric temperature range , dilution , analytical chemistry (journal) , electrical resistance and conductance , inert , refractory (planetary science) , semiconductor , mineralogy , metallurgy , chemistry , composite material , physics , thermodynamics , biochemistry , optoelectronics , organic chemistry , chromatography , meteorology , catalysis
Measurements of electrical resistance in the composition systems Al 2 O 3 –SiO 2 , SiO 2 –TiO 2 , Al 2 O 3 –Cr 2 O 3 , and MgO–NiO were made using, in general, dry‐pressed disks about 3 cm. in diameter and 0.4 cm. thick and fired to 1500°C. In the Al 2 O 3 –SiO 2 series minimum resistance was shown by the samples containing 50% SiO 2 , 50% Al 2 O 3 . The resistance of Al 2 O 3 was increased by the addition of small amounts of Cr 2 O 3 . The same effect was observed in the higher temperature range with small additions of NiO to MgO. In other instances the addition of the relatively inert SiO 2 , Al 2 O 3 , and MgO to the semiconductors TiO 2 , Cr 2 O 3 , and NiO resulted in a dilution effect. The resistance of Cr 2 O 3 was decreased by the addition of a slight amount of MgO.