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Recent developments and new strategies in scanning electron microscopy *
Author(s) -
CAZAUX J.
Publication year - 2005
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.0022-2720.2005.01414.x
Subject(s) - secondary electrons , resolution (logic) , optics , electron , secondary emission , contrast (vision) , image resolution , scanning electron microscope , beam (structure) , energy (signal processing) , cathode ray , physics , materials science , computer science , artificial intelligence , nuclear physics , quantum mechanics
Summary In addition to improvements in lateral resolution in scanning electron microscopy, recent developments of interest here concern extension of the incident beam energy, E 0 , over two decades, from ≈ 20 keV to ≈ 0.1–0.5 keV and the possibility of changing the take‐off emission, α, of detected secondary electrons. These two degrees of freedom for image acquisition permit a series of images of the same field of view of a specimen to be obtained, each image of the series differing from the others in some aspect. The origins of these differences are explored in detail and they are tentatively interpreted in terms of the change in the secondary electron emission yield δ vs. E 0 , δ = f ( E 0 ), and also of the change in δ vs. α, ∂δ/∂α. Various origins for the chemical contrast and topographic contrast have been identified. Illustrated by correlating a secondary electron image and a backscattered electron image, use of the scatter diagram technique facilitates image comparison. The difference between the lateral resolution and the size of the minimum detectable detail is outlined to avoid possible errors in nanometrology. Some aspects related to charging are also considered and possible causes of contrast reversal are suggested. Finally, the suggested strategy consists of the acquisition of various images of a given specimen by changing one parameter: primary beam energy and take‐off angle for conductive specimens; working distance or beam intensity for high‐resolution experiments; scanning frequency for insulating specimens.