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Characterization of crystallographic properties of SMC poly Si using electron backscattered diffraction
Author(s) -
KIM D.I.,
OH K. H.,
LEE H.C.,
CHANG Y. J.,
SOHN W. S.,
JANG J.
Publication year - 2004
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.0022-2720.2004.01360.x
Subject(s) - crystallinity , materials science , misorientation , grain boundary , crystallite , thin film transistor , annealing (glass) , electron diffraction , crystallization , crystallography , electron backscatter diffraction , diffraction , composite material , optics , microstructure , chemical engineering , metallurgy , chemistry , physics , layer (electronics) , engineering
Summary Crystallographic properties of silicide mediated crystallization (SMC) polycrystalline silicon (poly Si) and excimer laser annealing (ELA) poly Si were studied by electron backscattered diffraction. Large‐grain sized poly Si with a large fraction of low‐angle grain boundaries was acquired by SMC, and small‐grain sized poly Si with high‐angle grain boundaries especially around 60° was acquired by ELA. The thin film transistor (TFT) device characteristics were investigated in view of short‐range crystallinity (pattern quality) and long‐range crystallinity (misorientation distribution) of the specimens. Short‐range crystallinity did not significantly affect the TFT device characteristics, and long‐range crystallinity considering the low energy level of special boundaries could be better related to the TFT device characteristics of poly Si.