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Thermal stability of Ti and Pt nanowires manufactured by Ga + focused ion beam
Author(s) -
INKSON B. J.,
DEHM G.,
WAGNER T.
Publication year - 2004
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.0022-2720.2004.01344.x
Subject(s) - materials science , nanowire , transmission electron microscopy , amorphous solid , coalescence (physics) , focused ion beam , ultra high vacuum , sputtering , epitaxy , monatomic ion , crystallization , thermal stability , ion beam , thin film , nanotechnology , composite material , chemical engineering , crystallography , ion , chemistry , physics , organic chemistry , layer (electronics) , astrobiology , engineering
Summary Ti and Pt nanowires have been produced by ultra high‐vacuum molecular beam epitaxy deposition of Ti thin films and focused ion beam (FIB) deposition of Pt thin films, followed by cross‐sectional FIB sputtering to form electron‐transparent nanowires. The thermal stability of the nanowires has been investigated by in situ thermal cycling in a transmission electron microscope. Epitaxial single crystal Ti nanowires on (0001)Al 2 O 3 substrates are microstructurally stable up to 550–600 °C, above which limited dislocation motion is activated shortly before the Ti‐wires oxidize. The amorphous FIB‐deposited Pt wires are stable up to 580–650 °C where partial crystallization is observed in vacuum. Faceted nanoparticles grow on the wire surface, growing into free space by surface diffusion and minimizing contact area with the underlying wire. The particles are face‐centred cubic (fcc) Pt with some dissolved Ga. Continued heating results in particle spheroidization, coalescence and growth, retaining the fcc structure.