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Investigation of the crystallization behavior of laser‐irradiated EXTREME pattern by Raman spectroscopy
Author(s) -
Driggers Megan,
RiveroBaleine Clara
Publication year - 2020
Publication title -
international journal of applied glass science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.383
H-Index - 34
eISSN - 2041-1294
pISSN - 2041-1286
DOI - 10.1111/ijag.14560
Subject(s) - materials science , raman spectroscopy , chalcogenide , laser , crystallization , amorphous solid , spectroscopy , irradiation , phase (matter) , optics , optoelectronics , analytical chemistry (journal) , crystallography , chemical engineering , chemistry , physics , organic chemistry , quantum mechanics , nuclear physics , engineering , chromatography
This paper investigates the crystallization behavior of a Ge 2 Sb 2 Se 4 Te 1 (GSST) chalcogenide phase change material film using Raman spectroscopy. The properties of as‐deposited, thermally treated, and laser‐written GSST films are investigated. A single mask exposure laser excitation process was developed using a spatial light modulator with an 800 nm femto‐second laser to generate a direct laser‐written EXTREME pattern. The correlation between the laser‐imprinted EXTREME pattern and the phase change transition from amorphous to crystalline state of the GSST film was characterized using Raman spectroscopy.