Premium
Bi 2 O 3 –TiO 2 –Nd 2 O 3 lead‐free material for microwave device applications
Author(s) -
Slavov Stanislav S.,
Soreto Teixeira Silvia,
Graça Manuel P. F.,
Costa Luis C.,
Popova Venetka,
Dimitriev Yanko B.
Publication year - 2019
Publication title -
international journal of applied glass science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.383
H-Index - 34
eISSN - 2041-1294
pISSN - 2041-1286
DOI - 10.1111/ijag.12976
Subject(s) - materials science , microwave , permittivity , dielectric , crystallite , microwave cavity , diffraction , resonant cavity , quenching (fluorescence) , lead (geology) , single crystal , dielectric loss , optoelectronics , x ray crystallography , optics , nuclear magnetic resonance , telecommunications , metallurgy , physics , computer science , laser , geomorphology , fluorescence , geology
Abstract Lead‐free Bi 2 O 3 –TiO 2 –Nd 2 O 3 system and its potential application for microwave devices applications were studied. The samples were synthesized using the melt quenching method. According to the X‐Ray Diffraction analysis, the samples are polycrystalline with three different crystal phases. Measurements of the dielectric complex permittivity function were made at 2.7 GHz, using a resonant cavity and the small perturbation theory. The values of the dielectric permittivity of the prepared materials were compared with the commercial ones, and we conclude that these new lead‐free materials have a good potential to replace lead‐containing devices for microwave frequency applications.