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Doped tellurite glasses: Extending near‐infrared emission for near‐2.0‐μm amplifiers
Author(s) -
Seshadri M.,
Anjos V.,
Bell M. J. V.,
Barbosa Luiz C.,
Bosco Giácomo B. F.,
Tessler Leandro R.,
Suresh Kumar J.,
Graça Manuel P. F.,
Soares Manuel. J.,
Radha M.,
Ratnakaram Y. C.
Publication year - 2017
Publication title -
international journal of applied glass science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.383
H-Index - 34
eISSN - 2041-1294
pISSN - 2041-1286
DOI - 10.1111/ijag.12213
Subject(s) - materials science , analytical chemistry (journal) , emission intensity , ion , doping , infrared , laser , laser diode , quenching (fluorescence) , stimulated emission , fluorescence , diode , optics , optoelectronics , chemistry , physics , organic chemistry , chromatography
Tm 3+ ‐singly‐doped and Tm 3+ ‐/Ho 3+ ‐codoped TeO 2 ‐Bi 2 O 3 ‐ZnO‐Li 2 O‐Nb 2 O 5 ( TBZLN ) tellurite glasses were successfully prepared by the melt‐quenching technique. Emission characteristics and energy transfer mechanisms were studied upon 785‐nm laser diode excitation. A significant enhancement of emission intensity at 1.81 μm with increasing concentration of Tm 3+ ions has been observed while increase in the emission intensity at 2.0 μm with increasing concentration of Ho 3+ has been observed up to the equal concentration of Tm 3+ (0.5 mol%) in TBZLN glasses. The stimulated emission cross section of Tm 3+ : 3 F 4 → 3 H 6 (5.20×10 −21 cm 2 ) and Ho 3+ : 5 I 7 → 5 I 8 (4.00×10 −21 cm 2 ) in 1.0 mol% Tm 3+ ‐doped and 0.5 mol% Tm 3+ /1.0 mol% Ho 3+ ‐codoped TBZLN glasses are higher compared with the reported and are found to be excellent candidates for solid‐state lasers operating at ~1.8 and 2.0 μm, respectively. The extension of near‐infrared ( NIR ) emission of Tm 3+ with Ho 3+ ions provides the possibility of using these materials for broadband NIR amplifiers.