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Effect of Crystallization Temperature on Electrical Properties of Er 3+ /Yb 3+ –SrO.TiO 2 Borosilicate Glass
Author(s) -
Maheshwari Aditya,
Singh Nitish Kumar,
Parkash Om,
Kumar Devendra
Publication year - 2016
Publication title -
international journal of applied glass science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.383
H-Index - 34
eISSN - 2041-1294
pISSN - 2041-1286
DOI - 10.1111/ijag.12126
Subject(s) - materials science , crystallization , dielectric , borosilicate glass , curie temperature , glass ceramic , atmospheric temperature range , dissipation factor , ceramic , analytical chemistry (journal) , relaxation (psychology) , phase (matter) , mineralogy , composite material , chemical engineering , thermodynamics , condensed matter physics , ferromagnetism , optoelectronics , psychology , social psychology , chemistry , physics , organic chemistry , chromatography , engineering
Er 3+ –Yb 3+ doped 22[3SrO.2TiO 2 ].30[2SiO 2 .B 2 O 3 ] glass and glass–ceramics are developed and investigated for their electrical properties. The degree of crystallization is varied by means of crystallization temperature ranging from 600 to 1000°C. In glass–ceramic samples, two major crystalline phases, Sr 3 Ti 2 O 7 and TiO 2 , are confirmed by diffraction analysis. The best crystallized glass–ceramic (crystallization temperature 950°C) sample shows 100–1 50 times lower impedance in temperature range, 200–300°C, than the uncrystallized glass. Electrical relaxation corresponding to the crystalline phase can be isolated in frequency domain. The glass–ceramic shows a 10–100 times higher dielectric constant than the glass in lower frequency range. This dielectric constant and dissipation factor increase with increasing temperature beyond a threshold value. Curie temperature was not visible in the measured temperature range.