Effect of Crystallization Temperature on Electrical Properties of Er 3+ /Yb 3+ –SrO.TiO 2 Borosilicate Glass

Er 3+ –Yb 3+ doped 22[3SrO.2TiO 2 ].30[2SiO 2 .B 2 O 3 ] glass and glass–ceramics are developed and investigated for their electrical properties. The degree of crystallization is varied by means of crystallization temperature ranging from 600 to 1000°C. In glass–ceramic samples, two major crystalline phases, Sr 3 Ti 2 O 7 and TiO 2 , are confirmed by diffraction analysis. The best crystallized glass–ceramic (crystallization temperature 950°C) sample shows 100–1 50 times lower impedance in temperature range, 200–300°C, than the uncrystallized glass. Electrical relaxation corresponding to the crystalline phase can be isolated in frequency domain. The glass–ceramic shows a 10–100 times higher dielectric constant than the glass in lower frequency range. This dielectric constant and dissipation factor increase with increasing temperature beyond a threshold value. Curie temperature was not visible in the measured temperature range.