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Preparation of V doped lanthanum silicate electrolyte ceramics by combustion method and study on conductance mechanism
Author(s) -
Chen Shi,
Huang Zhi Liang,
Chen Chang Lian,
Lu Mian,
Wu Chang Sheng,
Jiang Yuan
Publication year - 2021
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/ijac.13666
Subject(s) - materials science , conductivity , doping , lanthanum , electrolyte , analytical chemistry (journal) , oxygen , vanadium , inorganic chemistry , chemistry , metallurgy , electrode , chromatography , optoelectronics , organic chemistry
Vanadium doped La 9.33 Si 6− x V x O 26+0.5 x ( x = 0.5, 1.0, 1.5) (LSVO) electrolyte powder was prepared by combustion method at 600°C for 5‐7 min. The powder was sintered at 1500°C for 3 hours to prepare LSVO ceramics. XPS, IR, XRD, and EIS analysis show that V 5+ doping replaces Si 4+ in [SiO 4 ] to form [Si(V)O 4 ] tetrahedron. With the increase in x , the lattice volume increase. When x = 2.0, the LaVO 4 phase was formed, indicating that the limit doping amount of V 5+ replacing Si 4+ is x ≤ 1.5. The conductivity of LSVO increases significantly with the increase in x ( x ≤ 1.0), which attributed to thex V 5 +⟶ x Si 4 +x V Si ∙ + 1 / 2 x Oi ∗ / /defect reaction caused by V 5+ doping. The addition of the interstitial oxygen Oi* in 6 3 channels and the increase of lattice volume leads to increased conductivity. When x = 1.0, the highest conductivity is 1.46 × 10 −2 S·cm −1 (800°C). The doping enhancement conductivity mechanism is the Interstitial oxygen defect‐Lattice volume composite enhancement mechanism.