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Effect of transition metal doping on the sintering and electrochemical properties of GDC buffer layer in SOFCs
Author(s) -
Rehman Saeed Ur,
Shaur Ahmad,
Kim HyeSung,
Joh Dong Woo,
Song RakHyun,
Lim TakHyoung,
Hong JongEun,
Park SeokJoo,
Lee SeungBok
Publication year - 2020
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/ijac.13650
Subject(s) - materials science , sintering , doping , electrochemistry , chemical engineering , cathode , anode , yttria stabilized zirconia , dopant , dielectric spectroscopy , barrier layer , transition metal , layer (electronics) , cubic zirconia , composite material , ceramic , electrode , chemistry , engineering , catalysis , optoelectronics , biochemistry
A dense Ce 0.9 Gd 0.1 O 2−d (GDC) interlayer is an essential component of the SOFCs to inhibit interfacial elemental diffusion between zirconia‐based electrolytes (eg YSZ) and cathodes. However, the characteristic high sintering temperature of GDC (>1400°C) makes it challenging to fabricate an effective highly dense interlayer owing to the formation of more resistive (Zr,Ce)O 2 interfacial solid solutions with YSZ at those temperatures. To fabricate a useful GDC interlayer, we studied the influence of transition metal (TM) (Co, Cu, Fe, Mn, & Zn) doping on the sintering and electrochemical properties of GDC. Dilatometry data showed dramatic drops in the necking and final sintering temperatures for the TM‐doped GDCs, improving the densification of the GDC in the order of Fe > Co > Mn > Cu > Zn. However, the electrochemical impedance data showed that among various transition metal dopants, Mn doping resulted in the best electrochemical properties. Anode supported SOFCs with Mn‐doped, nano, and commercial‐micron GDC interlayers were compared with regard to their performance and stability levels. Although all of the SOFCs showed stable performance, the SOFC with the Mn‐doped GDC interlayer showed the highest power density of 1.14 W cm −2 at 750°C. Hence, Mn‐doped GDC is suggested for application as an effective diffusion barrier layer in SOFCs.