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Energy storage and thermodynamics of PNZST thick films with coexisting antiferroelectric and ferroelectric phases
Author(s) -
Zhao QuanLiang,
Wang YiKai,
He GuangPing,
Di JieJian,
Zhao Lei,
Su TingTing,
Zhang MengYing,
Hou ZhiLing,
Wang Dawei
Publication year - 2020
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/ijac.13642
Subject(s) - lanio , antiferroelectricity , materials science , ferroelectricity , dielectric , hysteresis , phase (matter) , electrode , condensed matter physics , optoelectronics , chemistry , physics , organic chemistry
Pb 0.99 Nb 0.02 (Zr 0.85 Sn 0.13 Ti 0.02 )O 3 (PNZST) antiferroelectric (AFE) thick films are successfully deposited on silicon‐based Pt and LaNiO 3 electrodes by a sol‐gel method. The coexistence of ferroelectric (FE) and AFE phases are revealed in PNZST films by XRD, electric‐induced hysteresis loops, dielectric, and leakage current properties. Comparing with PNZST/Pt film, larger recoverable energy density and efficiency are obtained in PNZST/LaNiO 3 film due to the lower FE phase proportion. It is analyzed and demonstrated by a thermodynamic model of AFE and FE coexistence system. In addition, the fatigue behaviors of both AFE films are also affected by the proportion of the coexisting FE phase. PNZST/LaNiO 3 film exhibits good fatigue resistance on energy storage even after 10 10 switching cycles, which is attractive to pulsed power applications.