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Doping level effects in Nb self‐doped Bi 3 TiNbO 9 high‐temperature piezoceramics with improved electrical properties
Author(s) -
Zhang Yuhao,
Huang Peiming,
Zhu Lingli,
Du Juan,
Bai Wangfeng,
Lin Mi,
Zheng Peng,
Zheng Liang,
Zhang Yang
Publication year - 2020
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/ijac.13537
Subject(s) - materials science , doping , curie temperature , electrical resistivity and conductivity , microstructure , ceramic , piezoelectricity , sintering , piezoelectric coefficient , grain size , anisotropy , grain growth , analytical chemistry (journal) , composite material , condensed matter physics , optoelectronics , ferromagnetism , electrical engineering , physics , chemistry , engineering , chromatography , quantum mechanics
Nb self‐doped Bi 3 Ti 1‐ x Nb 1+ x O 9 ( x = 0, 0.02, 0.04, 0.06, 0.08, and 0.1) high‐temperature piezoelectric ceramics were fabricated through the conventional solid‐state sintering method. The effects of different Nb self‐doping levels on the microstructure, piezoelectric activities, and electrical conduction behaviors of these Nb self‐doped Bi 3 Ti 1‐ x Nb 1+ x O 9 ceramics were studied in detail. Large doping level effects on piezoelectric activity and resistivity were confirmed, which might be ascribed to the evolution of the crystal structure and the variations of the oxygen vacancy concentration and the grain anisotropy induced by Nb doping. An optimized piezoelectric coefficient ( d 33 ) of 11.6 pC/N was achieved at x = 0.04 with a Curie temperature of 906°C. Additionally, an improved DC resistivity of 6.18 × 10 5 Ω·cm at 600°C was acquired in this ceramic. Furthermore, the ceramic exhibited excellent thermal stability with the d 33 value maintaining 95% of its initial value after being annealed at 850°C for 2 hours. These results showed that Nb self‐doped Bi 3 Ti 1‐ x Nb 1+ x O 9 ceramics might have great potentials for high‐temperature piezoelectric applications.