Premium
Preparation of α‐Si 3 N 4 by direct nitridation using polysilicon waste by diamond wire cutting
Author(s) -
Hou Yong,
Zhang GuoHua,
Chou KuoChih
Publication year - 2019
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/ijac.13254
Subject(s) - materials science , diamond , silicon , semiconductor , environmental pollution , metal , metallurgy , chemical engineering , optoelectronics , environmental protection , environmental science , engineering
With the rapid development of the semiconductor industry and solar photovoltaic industry, a large number of polysilicon wastes from diamond wire cutting are accumulated, which not only pollute the environment, but also cause safety problems due to the ultrafine particle size and high reactivity. The diamond wire cutting polysilicon waste was used to prepare α‐Si 3 N 4 by direct nitridation method. This method could not only fully recycle the waste and reduce environmental pollution, but also could reduce the production cost of α‐Si 3 N 4 . Furthermore, the effects of FeCl 3 , NaCl, and metal Cu on the nitridation of polysilicon waste are investigated in detail, respectively. It is found that FeCl 3 and NaCl are not ideal additives for the preparation of α‐Si 3 N 4 . However, α‐Si 3 N 4 ‐dominated Si 3 N 4 can be obtained via adding 5 wt% Cu after nitridation at 1250°C for 8 hours, and the relative content of α‐Si 3 N 4 reaches 92.37%.